Title :
Linear broadband GaN MMICs for Ku-band Applications
Author :
Schuh, P. ; Leberer, R. ; Sledzik, H. ; Schmidt, D. ; Oppermann, M. ; Adelseck, B. ; Brugger, H. ; Quay, Ruediger ; van Raay, Friedbert ; Seelmann-Eggebert, Matthias ; Kiefer, Rudolf ; Bronner, W.
Author_Institution :
EADS Deutschland GmbH, Ulm
Abstract :
AlGaN/GaN-based HEMT MMICs on s.i. SiC wafer substrates are designed and realized for linear broadband amplifiers. Electrical performance data and assembly technology issues are presented in this paper. The linear broadband amplifier MMIC operates in the frequency range from 9 GHz to 19 GHz and is fabricated in microstrip technology including via-holes. The measured small signal gain is about 13 dB and the output power at 1dB compression is in the range of 27dBm. Two-tone measurements show good linearity. Up to 26dBm output power the IM3 value is better than 30dBc. A reliable assembly process for the MMICs is necessary in order to achieve good thermal conductivity between the underlying SiC wafer substrate and the heatspreader beneath
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; assembling; gallium compounds; silicon; silicon compounds; thermal conductivity; wide band gap semiconductors; wideband amplifiers; 9 to 19 GHz; AlGaN-GaN-Si; HEMT MMIC; Ku-band applications; assembly technology; linear broadband MMIC; linear broadband amplifiers; microstrip technology; thermal conductivity; two-tone measurements; Aluminum gallium nitride; Assembly; Broadband amplifiers; Frequency; Gallium nitride; HEMTs; MMICs; Power generation; Silicon carbide; Thermal conductivity; AlGaN/GaN; Broadband amplifier; HEMTs; Linearity; MMICs;
Conference_Titel :
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9541-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2006.249475
