Linearity and Efficiency Performance of GaN HEMTs with Digital Pre-Distortion Correction

Author

Poulton, M.J. ; Leverich, W.K. ; Shealy, J.B. ; Vetury, R. ; Brown, J.D. ; Green, D.S. ; Gibb, S.R.

Author_Institution

RF Micro Devices, Charlotte, NC

fYear

2006

fDate

11-16 June 2006

Firstpage

1327

Lastpage

1330

Abstract

The linearity and efficiency performance was studied for large periphery AlGaN/GaN HEMTs. Comparison was made between inherent linear device performance and device performance using digital pre-distortion (DPD) correction. Additionally, both drain voltage and current were optimized to provide high efficiency for a specified linearity. Significant improvements in linear efficiency were achieved using the DPD correction with a best measured PAE of 43.5 %, at a Vd of 28 V, using two carrier W-CDMA

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; 28 V; AlGaN-GaN; DPD correction; W-CDMA; digital pre-distortion correction; high electron mobility transistor; linear device performance; linearity performance; Aluminum gallium nitride; Distortion measurement; Gallium nitride; HEMTs; Intermodulation distortion; Linearity; MODFETs; Multiaccess communication; Power amplifiers; Testing; GaN; Semiconductor devices; WCDMA; circuit optimization; code division multiple access; intermodulation distortion; power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2006. IEEE MTT-S International

Conference_Location

San Francisco, CA

ISSN

0149-645X

Print_ISBN

0-7803-9541-7

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2006.249493

Filename

4015169