DocumentCode
2714595
Title
Antireflective microstructures for silicon photodetector surfaces
Author
Dinescu, A. ; Conache, G. ; Gavrila, R.
Author_Institution
IMT, Bucharest, Romania
Volume
1
fYear
2004
fDate
4-6 Oct. 2004
Lastpage
232
Abstract
A photodetector efficiency is closely related to the light quantity trapped inside the structure. To reduce the reflectance, microstructures of different shapes can be carved by photolithographic and anisotropic etching procedures on silicon wafers meant to be used in photodetecting devices. Areas of inverted pyramids and deep vertical-wall grooves obtained in this way on (100) and [110]-oriented single-crystal silicon wafers were characterized by reflectance measurements.
Keywords
crystal microstructure; etching; photodetectors; photolithography; reflectivity; silicon; surface texture; Si; anisotropic etching; antireflective microstructures; deep vertical-wall grooves; inverted pyramid areas; light trapping; photodetecting devices; photodetector efficiency; photodetector surface; photolithography; reflectance measurement; reflectance reduction; single-crystal silicon wafer; Anisotropic magnetoresistance; Conductivity; Geometry; Microstructure; Optical reflection; Photodetectors; Reflectivity; Silicon; Surface texture; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2004. CAS 2004 Proceedings. 2004 International
Print_ISBN
0-7803-8499-7
Type
conf
DOI
10.1109/SMICND.2004.1402848
Filename
1402848
Link To Document