AlGaN/GaN Dual-Gate HEMT Mixers for 24 GHz Pulse-Modulation

Author

Shiojima, Kenji ; Makimura, Takashi ; Kosugi, Toshihiko ; Suemitsu, Tetsuya ; Shigekawa, Naoteru ; Hiroki, Masanobu ; Yokoyama, Haruki

Author_Institution

NTT Corp., Atsugi

fYear

2006

fDate

11-16 June 2006

Firstpage

1331

Lastpage

1334

Abstract

We have fabricated dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) with a short gate on SiC substrates for use in high-power mixers and have measured their pulse modulation characteristics. A device with a T-shaped gate (0.15 mum times 200 mum) modulates a 24-GHz local (LO) signal with 0.4-ns-wide pulses. The peak output power is as high as 8.9 dBm and the bandwidth is over 2 GHz. These results indicate that this high-power mixer can directly drive an antenna and is applicable for 24-GHz ultra-wideband (UWB) applications

Keywords

HEMT integrated circuits; III-V semiconductors; aluminium compounds; gallium compounds; microwave mixers; silicon compounds; wide band gap semiconductors; 0.15 micron; 200 micron; 24 GHz; AlGaN-GaN-SiC; T-shaped gate; dual-gate HEMT mixers; high-power mixers; microwave mixers; pulse modulation; ultra wideband applications; Aluminum gallium nitride; Bandwidth; Gallium nitride; HEMTs; MODFETs; Power generation; Pulse measurements; Pulse modulation; Silicon carbide; Ultra wideband antennas; Microwave mixers; power MODFETs; power semiconductor devices; pulse modulation; semiconductor device fabrication;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2006. IEEE MTT-S International

Conference_Location

San Francisco, CA

ISSN

0149-645X

Print_ISBN

0-7803-9541-7

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2006.249494

Filename

4015170