AlGaN/GaN heterostructure transistors for the generation and detection of THz radiation

Author

Giovine, E. ; Di Gaspare, Alessandra ; Ortolani, M. ; Evangelisti, F. ; Foglietti, V. ; Cetronio, A. ; Dominijanni, D. ; Lanzieri, C. ; Peroni, M. ; Doria, A. ; Giovenale, E. ; Spassovsky, I. ; Gallerano, G.P.

Author_Institution

Ist. di Fotonica e Nanotecnol., CNR, Rome, Italy

fYear

2010

fDate

5-10 Sept. 2010

Firstpage

1

Lastpage

2

Abstract

The AlGaN/GaN heterostructure is an excellent candidate for the realization of sub-millimeter wave power amplifiers, which can serve as integrated power source for THz frequency multipliers. Here we discuss the operation of AlGaN/GaN transistors as THz detector, which provides information on the behavior of the electron system at THz frequencies.

Keywords

III-V semiconductors; aluminium compounds; frequency multipliers; gallium compounds; high electron mobility transistors; submillimetre wave amplifiers; terahertz wave detectors; wide band gap semiconductors; AlGaN-GaN; THz frequencies; THz frequency multiplier; THz radiation detection; THz radiation generation; electron system; heterostructure transistors; integrated power source; submillimeter wave power amplifier; Aluminum gallium nitride; Couplings; Gallium nitride; HEMTs; Logic gates; MODFETs;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on

Conference_Location

Rome

Print_ISBN

978-1-4244-6655-9

Type

conf

DOI

10.1109/ICIMW.2010.5612705

Filename

5612705