• DocumentCode
    2714953
  • Title

    Improved performance of GaAs-based terahertz emitters

  • Author

    Headley, C. ; Fu, L. ; Parkinson, P. ; Xu, X. ; Lloyd-Hughes, J. ; Jagadish, C. ; Johnston, M.B.

  • Author_Institution
    Dept. of Phys., Univ. of Oxford, Oxford, UK
  • fYear
    2010
  • fDate
    5-10 Sept. 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We have improved the stability and performance of terahertz photoconductive (Auston) switches using a combination of (NH4)2S surface passivation and silicon nitride (Si3N4) encapsulation. The passivation and encapsulation processes increased the average terahertz power generated four-fold.
  • Keywords
    III-V semiconductors; ammonium compounds; encapsulation; gallium arsenide; passivation; photoconducting switches; silicon compounds; terahertz wave devices; terahertz wave generation; GaAs; silicon nitride encapsulation; stability; surface passivation; terahertz emitter; terahertz photoconductive switch; terahertz power generation; Charge carrier processes; Gallium arsenide; Laser beams; Measurement by laser beam; Surface emitting lasers; Surface impedance; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
  • Conference_Location
    Rome
  • Print_ISBN
    978-1-4244-6655-9
  • Type

    conf

  • DOI
    10.1109/ICIMW.2010.5612725
  • Filename
    5612725
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2714953