DocumentCode :
2714953
Title :
Improved performance of GaAs-based terahertz emitters
Author :
Headley, C. ; Fu, L. ; Parkinson, P. ; Xu, X. ; Lloyd-Hughes, J. ; Jagadish, C. ; Johnston, M.B.
Author_Institution :
Dept. of Phys., Univ. of Oxford, Oxford, UK
fYear :
2010
fDate :
5-10 Sept. 2010
Firstpage :
1
Lastpage :
2
Abstract :
We have improved the stability and performance of terahertz photoconductive (Auston) switches using a combination of (NH4)2S surface passivation and silicon nitride (Si3N4) encapsulation. The passivation and encapsulation processes increased the average terahertz power generated four-fold.
Keywords :
III-V semiconductors; ammonium compounds; encapsulation; gallium arsenide; passivation; photoconducting switches; silicon compounds; terahertz wave devices; terahertz wave generation; GaAs; silicon nitride encapsulation; stability; surface passivation; terahertz emitter; terahertz photoconductive switch; terahertz power generation; Charge carrier processes; Gallium arsenide; Laser beams; Measurement by laser beam; Surface emitting lasers; Surface impedance; Surface treatment;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
Type :
conf
DOI :
10.1109/ICIMW.2010.5612725
Filename :
5612725
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2714953
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