Title :
Terahertz emission from InAs and InSb under a 1.55 µm Laser Excitation
Author :
Que, Christopher T. ; Nakajima, Hidekazu ; Tani, Masahiko
Author_Institution :
Res. Center for Dev. of Far Infrared Region, Univ. of Fukui, Fukui, Japan
Abstract :
Terahertz (THz) emission from a 1.55 μm laser excitation on InAs and InSb was investigated. InAs showed a much higher emission as compared to InSb that differs from earlier reports. Semiconductor quality or different surface conditions could be the cause of this unexpected result.
Keywords :
III-V semiconductors; high-speed optical techniques; indium compounds; photoexcitation; terahertz wave spectra; InAs; InSb; THz emission; femtosecond fiber laser; laser excitation; semiconductor; terahertz emission; wavelength 1.55 mum; Couplers; Fiber lasers; Laser beams; Laser excitation; Lenses; Silicon; Surface emitting lasers;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5612733
