Title :
Lanthanides application in planar technology of microwave devices production
Author :
Brinkevich, D.I. ; Prosolovich, V.S. ; Yankovski, Yu.N.
Author_Institution :
Belarus State Univ., Minsk, Belarus
Abstract :
It is shown that rare-earth doping of silicon can be useful in the technology of SHF-devices. The use of silicon doped by rare-earth elements (REE) as substrates for epitaxial layers allows the improvement of the stability of p-n junctions and MOS-structures to radiation effects.
Keywords :
MIS structures; elemental semiconductors; erbium; holmium; leakage currents; lutetium; microwave devices; p-n junctions; radiation hardening (electronics); semiconductor device breakdown; semiconductor device measurement; semiconductor doping; silicon; MOS structure dielectric; MOSFET; REE epitaxial layer substrates; SHF-devices; Si:Er; Si:Ho; Si:Lu; breakdown voltage; leakage current; p-n junction stability; planar microwave device technology; radiation effects; rare-earth element doping; silicon lanthanide doping; Doping; Epitaxial layers; Microwave devices; Microwave technology; P-n junctions; Production; Radiation effects; Silicon; Stability; Substrates;
Conference_Titel :
Microwave and Telecommunication Technology, 2002. CriMiCo 2002. 12th International Conference
Print_ISBN :
966-7968-12-X
DOI :
10.1109/CRMICO.2002.1137301
