Title : 
Subthreshold Leakage Due to 1/F Noise and Rts(Random Telegraph Signals)
         
        
            Author : 
Miller, Drake A. ; Poocharoen, Panupat ; Forbes, Leonard
         
        
            Author_Institution : 
School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, OR 97331-5501, (541) 753-1409, prof@forbes4.com
         
        
        
        
        
        
            Abstract : 
An analysis of subthreshold leakage predicts a Gaussian or Normal distribution on large devices but a distorted distribution is possible on small devices. 1/f noise due to RTS signals on large well behaved devices will have a Gaussian distribution and cause a Gaussian current distribution under normal and subthreshold operating conditions. Localized channels or percolation channels can cause a distortion of this distribution and large subthreshold leakage current pulses which are most obvious in small devices.
         
        
            Keywords : 
Computer science; Current distribution; Electron traps; Frequency domain analysis; Gaussian distribution; Gaussian noise; Signal analysis; Subthreshold current; Telegraphy; Threshold voltage; leakage current; memory retention time; subthreshold current; subthreshold models;
         
        
        
        
            Conference_Titel : 
Microelectronics and Electron Devices, 2007. WMED 2007. IEEE Workshop on
         
        
            Conference_Location : 
Boise, ID, USA
         
        
            Print_ISBN : 
1-4244-1114-9
         
        
            Electronic_ISBN : 
1-4244-1114-9
         
        
        
            DOI : 
10.1109/WMED.2007.368840