Characterization of large area SPAD detectors operated in avalanche photodiode mode

Author

Jackson, J.C. ; Morrison, A.P. ; Lane, B.

Author_Institution

Nat. Microelectron. Res. Centre, Cork, Ireland

Volume

1

fYear

2000

fDate

2000

Firstpage

17

Abstract

Summary form only given. Single photon avalanche diodes (SPAD) have found varied applications. The dark count of a Geiger mode detector increases with area and limits the useful size of the detector. We have shown the characterization of silicon large area SPAD detectors operated below breakdown in avalanche mode. The multiplication gain and responsivity measured were excellent for 100 μm and 500 μm devices. While not suitable for operation in Geiger, single photon counting mode, the large area SPAD detectors exhibit excellent device performance below breakdown

Keywords

avalanche photodiodes; photodetectors; photon counting; silicon; 100 mum; 500 mum; Geiger mode detector; Si; avalanche mode; avalanche photodiode mode; dark count; large area SPAD detectors; multiplication gain; responsivity; single photon avalanche diodes; single photon counting mode; Avalanche breakdown; Avalanche photodiodes; CMOS technology; Circuits; Costs; Dark current; Detectors; Diodes; Optical sensors; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE

Conference_Location

Rio Grande

ISSN

1092-8081

Print_ISBN

0-7803-5947-X

Type

conf

DOI

10.1109/LEOS.2000.890651

Filename

890651