• DocumentCode
    271540
  • Title

    Interrelation of Sweep and Pulse Analysis of the SET Process in SrTiO3 Resistive Switching Memories

  • Author

    Fleck, Karsten ; Böttger, Ulrich ; Waser, Rainer ; Menzel, Stephan

  • Author_Institution
    Inst. of Mater. in Electr. Eng. & Inf. Technol. II, RWTH Aachen Univ., Aachen, Germany
  • Volume
    35
  • Issue
    9
  • fYear
    2014
  • fDate
    Sept. 2014
  • Firstpage
    924
  • Lastpage
    926
  • Abstract
    In this letter, we present a study of the SET kinetics of bipolar switching SrTiO3-based resistive memory devices. Pulse measurements on a timescale from 1 μs to 1 s and voltage sweeps with sweep-rates up to 6 MV/s were performed showing a highly nonlinear correlation between voltage and time. An analytical model is presented that explains the interrelation of both experiments by a comparative analysis of the current- voltage characteristics.
  • Keywords
    radiation hardening (electronics); random-access storage; strontium compounds; titanium compounds; SET kinetics; SrTiO3; analytical model; bipolar switching; pulse analysis; resistive switching memories; single event transient; sweep analysis; time 1 mus to 1 s; Analytical models; Current measurement; Kinetic theory; Pulse measurements; Switches; Transient analysis; Voltage measurement; ReRAM; Resistive switching; SrTiO₃; SrTiO3; nonvolatile memory; switching kinetics;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2014.2340016
  • Filename
    6872533
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=271540