A High 2LO-to-RF Isolation GaInP/GaAs HBT Sub-Harmonic Gilbert Mixer Using Three-Level Topology

Author

Wu, Tzung-Han ; Meng, Chinchun ; Huang, Guo-Wei

Author_Institution

Dept. of Commun. Eng., Nat. Chiao Tung Univ., Hsin-Chu

fYear

2006

fDate

11-16 June 2006

Firstpage

1505

Lastpage

1508

Abstract

A 5.2 GHz three-level sub-harmonic downconversion Gilbert mixer using GaInP/GaAs HBT (heterojunction bipolar transistor) technology is demonstrated in this paper. The LO frequency is half of the RF frequency for the three-level sub-harmonic mixer architecture; therefore, the RF frequency is 5.2004 GHz and LO frequency is 2.6 GHz. The conversion gain is 14.5 dB, IP_1dB is -18 dBm, IIP₂ is 13 dBm and the IIP₃ is -5 dBm when the LO power equals to -8 dBm. The 2LO-to-RF leakage is about -83 dBm. The RF input return loss is better than -18 dB from DC to 6GHz

Keywords

III-V semiconductors; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave mixers; 14.5 dB; 2.6 GHz; 5.2004 GHz; GaInP-GaAs; HBT; LO-to-RF isolation; downconversion Gilbert mixer; heterojunction bipolar transistor; subharmonic Gilbert mixer; CMOS technology; Gallium arsenide; Heterojunction bipolar transistors; Isolation technology; Power harmonic filters; RF signals; Radio frequency; Resistors; Substrates; Topology; 2LO-to-RF Isolation; GaInP/GaAs HBT; Gilbert mixer; Self-mixing; Sub-harmonic mixer;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2006. IEEE MTT-S International

Conference_Location

San Francisco, CA

ISSN

0149-645X

Print_ISBN

0-7803-9541-7

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2006.249578

Filename

4015219