Title :
A 71.9% power-added-efficiency inverse Class-FLDMOS
Author :
Allam-Ouyahia ; Duperrier, C. ; Tolant, C. ; Temcamani, F. ; Eudeline, Ph
Author_Institution :
ENSEA-ECIME, Cergy-Pontoise
Abstract :
Design and measured results of an inverse class-F power amplifier for high efficiency operation built with an LDMOS transistor is reported in this paper. We describe the design methodology, in particular the choice of the optimum load impedance presented at the fundamental frequency and at the harmonics. Measurements performed at 1GHz on this one stage power amplifier demonstrate at 2dB power gain compression: 71.9% power added efficiency, 13.2W output power and 16dB power gain. These performances, to our knowledge, represent the highest output power and gain reported for an inverse class F power amplifier
Keywords :
MOSFET; UHF power amplifiers; 1 GHz; 13.2 W; 16 dB; 71.9 percent; LDMOS transistor; inverse class F power amplifiers; load impedance; power added efficiency; power gain compression; Design methodology; Frequency; Gain measurement; High power amplifiers; Impedance; Operational amplifiers; Performance gain; Power amplifiers; Power generation; Power measurement; Inverse Class-F; LDMOS; Power amplifiers; high efficiency;
Conference_Titel :
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9541-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2006.249607
