DocumentCode :
2715648
Title :
The effect of gamma-irradiation on the operating parameters of group III nitrides-based field effect transistors
Author :
Belyaev, A.E. ; Konakova, R.V. ; Petrychuk, M.V. ; Kurakin, A.M. ; Vitusevich, S.A. ; Klein, N. ; Danylyuk, S.V.
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
fYear :
2002
fDate :
9-13 Sept. 2002
Firstpage :
484
Lastpage :
485
Abstract :
The influence of gamma ray irradiation on the properties of AlGaN/GaN based HEMTs has been investigated. It is shown that after being irradiated by gamma-quanta with a total dose of 109 rad the devices preserve their operational ability.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; gamma-ray effects; high electron mobility transistors; radiation hardening (electronics); semiconductor device measurement; semiconductor device noise; semiconductor device reliability; wide band gap semiconductors; 109 rad; AlGaN-GaN; gamma ray irradiation; gamma-quanta total dose; group III nitride-based field effect transistor operating parameters; irradiated AlGaN/GaN based HEMT; irradiated device noise sources; radiation hardness; FETs; Gallium nitride; HEMTs; Helium; IEEE catalog; MODFETs; Microwave devices; Organizing; Physics; Semiconductor device noise;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology, 2002. CriMiCo 2002. 12th International Conference
Print_ISBN :
966-7968-12-X
Type :
conf
DOI :
10.1109/CRMICO.2002.1137324
Filename :
1137324
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2715648
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