Title :
Fabrication and Investigation of High Efficiency Evanescently Coupled Uni-Traveling Carrier Photodiodes
Author :
Zhang, Y.X. ; Liao, Z.Y. ; Sun, Y. ; Chen, W.X. ; Zhao, L.J. ; Zhu, H.L. ; Wang, W.
Author_Institution :
Key Lab. of Semicond. Mater. Sci., Chinese Acad. of Sci., Beijing
Abstract :
In this paper, an evanescently coupled uni-traveling carrier photodiodes (EC-UTC-PDs) have been fabricated and investigated, which can benefit from the incorporation of a multimode diluted waveguide of appropriate length with experiment-simulation comparison. A high responsivity of 0.68 A/W at 1.55-mum without an anti-reflection coating, -1 dB compression current of more than 19 mA, and a large -1 dB vertical alignment tolerance of 2.2 mum were achieved.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; photodiodes; GaInAsP; compression current; evanescently coupled uni-traveling carrier photodiodes; multimode diluted waveguide; responsivity; vertical alignment tolerance; wavelength 1.55 mum; Absorption; Coatings; Electrons; Etching; Indium phosphide; Optical device fabrication; Optical surface waves; Optical waveguides; Photodiodes; Zinc;
Conference_Titel :
PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-3901-0
Electronic_ISBN :
978-1-4244-2906-6
DOI :
10.1109/IPGC.2008.4781485
