Title :
Intracavity-contacted VCSELs using asymmetric oxidation for high-speed optical interconnects
Author :
Song, Y.M. ; Na, B.H. ; Chang, K.S. ; Lee, Y.T.
Author_Institution :
Dept. of Inf. & Commun., Gwangju Insititute of Sci. & Technol., Gwangju, South Korea
Abstract :
980 nm intracavity-contacted oxide-aperture vertical-cavity surface-emitting lasers (VCSELs) with high modulation bandwidth up to 11 GHz have been demonstrated. Asymmetric oxidation was used for reduction of parasitic capacitance and for relaxation of current crowding at oxide aperture rim. The modulation current efficiency factor (MCEF) of 5.6 GHz/mA1/2 was also achieved.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; optical interconnections; semiconductor lasers; surface emitting lasers; GaAs-AlGaAs; asymmetric oxidation; bandwidth 11 GHz; current crowding; high-speed optical interconnects; intracavity-contacted oxide-aperture VCSEL; modulation current efficiency factor; parasitic capacitance; vertical-cavity surface-emitting lasers; wavelength 980 nm; Apertures; Bandwidth; Distributed Bragg reflectors; Epitaxial layers; Gallium arsenide; Optical interconnections; Oxidation; Parasitic capacitance; Shape; Vertical cavity surface emitting lasers;
Conference_Titel :
PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-3901-0
Electronic_ISBN :
978-1-4244-2906-6
DOI :
10.1109/IPGC.2008.4781486
