Title :
Wafer-bonded Ge:Ga blocked-impurity-band far-infrared detectors
Author :
Sawayama, Yoshihiro ; Doi, Yasuo ; Kurayama, Ryuji ; Higurashi, Eiji ; Patrashin, Mikhail ; Hosako, Iwao
Author_Institution :
Univ. of Tokyo, Tokyo, Japan
Abstract :
We report a successful fabrication of a far-infrared blocked-impurity-band (BIB) detector. We achieve a clear boundary interface between an absorption layer and a blocking layer with a transition layer of 8 nm thick by bonding two discrete germanium wafers using surface activated bonding (SAB) technique. As the results, a good responsivity of ~7 A/W at 2 K has been achieved with extended cutoff wavelength compared to a conventional Ge:Ga photoconductor detector.
Keywords :
elemental semiconductors; gallium; germanium; infrared detectors; photodetectors; wafer bonding; Ge:Ga; absorption layer; blocking layer; clear boundary interface; far infrared blocked impurity band detector; far infrared detector; photoconductor detector; surface activated bonding technique; temperature 2 K; wafer bonded blocked impurity band; wafer bonding;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5612767
