Title :
A fully integrated Class-E power amplifier in 0.13um CMOS technology
Author :
Khan, H.R. ; Qureshi, A.R. ; Wahab, Q.
Author_Institution :
Electron. Eng. Dept., Univ. of Eng. & Technol., Karachi, Pakistan
Abstract :
This paper presents a fully integrated differential Class-E power amplifier implemented in 130 nm CMOS process. The series resonant circuit and the reactance provided by inductor for Class-E operation is provided by a single parallel resonant circuit and a capacitor respectively. Driving stage and the output balun is also present on-chip. From a 2.5 V supply and a load of 50 Ω, the output power is greater than 19.5 dBm and the overall PAE including driving stage remains above 43% for the entire band of 1.4 GHz to 1.8 GHz.
Keywords :
CMOS analogue integrated circuits; UHF power amplifiers; baluns; CMOS technology; Class-E operation; capacitor; frequency 1.4 GHz to 1.8 GHz; fully integrated power amplifier; output balun; parallel resonant circuit; resistance 50 ohm; series resonant circuit; size 0.13 mum; voltage 2.5 V; Capacitors; Impedance matching; Inductance; Inductors; Power amplifiers; RLC circuits; Transistors;
Conference_Titel :
New Circuits and Systems Conference (NEWCAS), 2011 IEEE 9th International
Conference_Location :
Bordeaux
Print_ISBN :
978-1-61284-135-9
DOI :
10.1109/NEWCAS.2011.5981257
