Title :
Investigation of Temperature Characteristics for 1.3-μm InAs Quantum Dot VCSELs with Planar Electrodes Configuration
Author :
Ding, Y. ; Fan, W.J. ; Xu, D.W. ; Tong, C.Z. ; Zhao, L.J. ; Wang, W. ; Li, D.S. ; Ma, B.S. ; Yoon, S.F. ; Zhang, D.H.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
Abstract :
The 1.3 mum InAs quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) with novel planar electrodes configuration were fabricated. The lasing wavelength is around 1273 nm. The typical threshold current is lower than 6 mA. The output power of 0.9 mW with slope efficiency of 0.13 W/A has been recorded. Temperature dependence of the L-I-V relationship of InAs QD VCSELs was investigated. High temperature stability can be achieved with the temperature from 15degC to 50degC. The comparison of temperature characteristics of InAs QD VCSEls with two different oxide aperture sizes indicates the small oxide aperture leads to the more preferable temperature insensitivity.
Keywords :
III-V semiconductors; indium compounds; laser beams; laser cavity resonators; optical fabrication; optical fibre communication; optical transmitters; quantum dot lasers; surface emitting lasers; thermal stability; InAs; L-I-V relationship; lasing wavelength; optical fibre communication; oxide aperture size; planar electrodes configuration; power 0.9 mW; quantum dot VCSEL; size 1.3 mum; temperature 15 degC to 50 degC; temperature characteristics investigation; temperature insensitivity; temperature stability; threshold current; vertical cavity surface emitting laser fabrication; wavelength 1273 nm; Apertures; Electrodes; Power generation; Quantum dot lasers; Quantum dots; Stability; Surface emitting lasers; Temperature dependence; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-3901-0
Electronic_ISBN :
978-1-4244-2906-6
DOI :
10.1109/IPGC.2008.4781490
