DocumentCode :
2715879
Title :
Investigation of 1500V Non-Punch Through IGBT Using Carrier Lifetime Control and Anode Engineering
Author :
Kwang-Hoon Oh ; Young-Chul Kim ; Kyu-Hyun Lee ; Soo-Seong Kim ; Chong-Man Yun
Author_Institution :
Fairchild Semiconductor Inc., 420-711, Korea, e-mail: okhoon@fairchildsemi.co.kr
fYear :
2006
fDate :
18-22 June 2006
Firstpage :
1
Lastpage :
5
Abstract :
For high power applications, non-punch through (NPT) IGBTs are increasingly employed with a lot of benefits over punch through (PT) IGBTs. However, during switching off transition the lasting tail current significantly contributes to turn-off energy loss, which deteriorates the advantages of the NPT IGBTs especially in soft switching applications. In general, in order to reduce the turn-off energy loss and optimize trade-off performance, injection efficiency is simply controlled, which will only adjust the trade-off performances within a limited range. To generate the trade-off performances in a wider range, the carrier lifetime control as well as the anode engineering is simultaneously applied. In this work, the resultant empirical data for a 1500V NPT IGBT will be investigated. The relevant device issues and their implications will also be discussed for further improvement of NPT IGBTs.
Keywords :
Anodes; Charge carrier lifetime; Energy loss; Insulated gate bipolar transistors; Manufacturing processes; Power engineering and energy; Power semiconductor switches; Semiconductor device manufacture; Tail; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics Specialists Conference, 2006. PESC '06. 37th IEEE
ISSN :
0275-9306
Print_ISBN :
0-7803-9716-9
Type :
conf
DOI :
10.1109/PESC.2006.1712139
Filename :
1712139
Link To Document :
بازگشت