Title :
Study of Stresses and Plasticity in Through-Silicon Via Structures for 3D Interconnects by X-Ray Micro-Beam Diffraction
Author :
Tengfei Jiang ; Chenglin Wu ; Tamura, Naoki ; Kunz, Michael ; Byoung Gyu Kim ; Ho-Young Son ; Min-Suk Suh ; Im, Jay ; Rui Huang ; Ho, Paul S.
Author_Institution :
Microelectron. Res. Center, Univ. of Texas at Austin, Austin, TX, USA
Abstract :
X-ray microbeam diffraction measurements were conducted for copper (Cu) through-silicon via (TSV) structures. This technique has the unique capability to measure stress and deformation in Cu and in silicon with submicron resolution, which enables direct observation of the local plasticity in Cu and the deformation induced by thermal stresses in TSV structures. Grain growth in Cu vias was found to play an important role in controlling the stress relaxation during thermal cycling and, thus, the residual stress and plasticity in the TSV structure. The implication of the local plasticity on TSV reliability is discussed based on the results from this study and finite element analysis.
Keywords :
X-ray diffraction; copper; deformation; finite element analysis; integrated circuit interconnections; integrated circuit measurement; plasticity; stress analysis; stress measurement; stress relaxation; thermal stresses; three-dimensional integrated circuits; 3D interconnects; Cu; TSV reliability; X-ray microbeam diffraction measurements; copper TSV structures; deformation measurement; finite element analysis; local plasticity; residual stress; stress measurement; stress relaxation; submicron resolution; thermal cycling; thermal stresses; through-silicon via structures; Plastics; Silicon; Strain; Stress; Thermal stresses; Through-silicon vias; X-ray diffraction; TSV; X-ray microbeam diffraction; local plasticity; thermal stress;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2014.2310705
