Title :
ZnGeP2 in High Power Optical Parametric Oscillators
Author :
Lippert, E. ; Fonnum, H. ; Rustad, G. ; Stenersen, K.
Author_Institution :
Norwegian Defence Res. Establ. (FFI), Kjeller
Abstract :
In this paper we discuss the advantageous properties of ZnGeP2 for high power parametric oscillators. We present results with high conversion efficiency, good beam quality and high power. We have demonstrated 5.1 W in the 3-5 mum range and 0.95 W at 8 mum in a first round of experiments. In a new and power-scaled setup we predict more than 25 W of average power in the 3-5 mum range and 7 W at 8 mum.
Keywords :
germanium compounds; optical parametric oscillators; ternary semiconductors; zinc compounds; ZnGeP2; beam quality; conversion efficiency; high power optical parametric oscillator; power 5.1 W; wavelength 3 mum to 5 mum; Bandwidth; Frequency conversion; Laser excitation; Nonlinear optics; Optical frequency conversion; Optical materials; Optical pumping; Oscillators; Power lasers; Pump lasers;
Conference_Titel :
PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-3901-0
Electronic_ISBN :
978-1-4244-2906-6
DOI :
10.1109/IPGC.2008.4781502
