Title :
Trilayer Electron-beam Lithography and surface preparation for sub-micron Schottky contacts on GaAs heterostructures
Author :
Dominijanni, D. ; Casini, R. ; Foglietti, V. ; Ortolani, M. ; Notargiacomo, A. ; Lanzieri, C. ; Peroni, M. ; Romanini, P. ; Giovine, E.
Author_Institution :
CNR, Ist. di Fotonica e Nanotecnol., Rome, Italy
Abstract :
Foreseen operation at sub-THz frequencies of Schottky contacts for diodes and transistor gates on GaAs based heterostructures requires area reduction down to 0.1×1 microns, and wet chemical processes. We report on the compatibility of Trilayer Electron-beam Lithography with such wet processes.
Keywords :
III-V semiconductors; Schottky barriers; electron beam lithography; etching; gallium arsenide; surface cleaning; terahertz waves; GaAs; diodes; etching; heterostructures; subTHz frequency; submicron Schottky contacts; surface cleaning; surface preparation; transistor gates; trilayer electron-beam lithography; wet chemical processes; Gallium arsenide; Logic gates; Resists; Schottky barriers; Surface cleaning;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5612783
