Title :
Design of High-Brightness Tapered Lasers at 1060 nm Based on an Asymmetric Al-free Active Region Structure
Author :
Odriozola, H. ; Tijero, J. M G ; Esquivias, I. ; Borruel, L. ; Martín-Mínguez, A. ; Michel, N. ; Calligaro, M. ; Lecomte, M. ; Parillaud, O. ; Krakowski, M.
Author_Institution :
ETSI Telecomun., Univ. Politec. de Madrid, Madrid
Abstract :
High brightness gain guided tapered lasers emitting at 1060 nm based on an asymmetric layer structure were designed, simulated and fabricated, demonstrating better beam quality than symmetric designs.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser beams; optical fabrication; quantum well lasers; InGaAsP; asymmetric aluminium-free active region structure; high-brightness gain guided tapered laser beams; optical fabrication; quantum well laser design; wavelength 1060 nm; Brightness; Laser beams; Laser feedback; Laser modes; Nonlinear optics; Optical design; Optical feedback; Power generation; Semiconductor lasers; Waveguide lasers;
Conference_Titel :
PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-3901-0
Electronic_ISBN :
978-1-4244-2906-6
DOI :
10.1109/IPGC.2008.4781514
