DocumentCode :
2716173
Title :
Laser Trepan Drilling of Silicon in Air and under Water
Author :
Wee, L.M. ; Zheng, H.Y.
Author_Institution :
Singapore Inst. of Manuf. Technol., Singapore
fYear :
2008
fDate :
8-11 Dec. 2008
Firstpage :
1
Lastpage :
4
Abstract :
Micromachining of silicon was conducted using 355 etam-X AVIA laser that generates laser fluence in the range of 2-7 Jcm-2. Laser ablation drilling tests were conducted on a silicon workpiece in air and under water. Low pulse frequency and high peak powers generate smaller spatter deposition area. At high pulse frequencies, the spatter distributed can be changed as the results of laser ejected material interaction. Focal plane positions of below the surface of 0.15 mm gave less number of scanning and produced relatively smaller areas of spatter deposition. Low scanning velocity generates smaller deposition area in comparison to higher scanning velocity. The differences between laser ablation in air and under water are identified.
Keywords :
drilling; elemental semiconductors; laser ablation; laser beam machining; laser beams; micromachining; silicon; underwater optics; AVIA laser; Si; focal plane position; laser ablation drilling test; laser ejected material interaction; laser trepan drilling; silicon micromachining; size 0.15 mm; spatter deposition; under water laser ablation; wavelength 355 nm; Drilling; Frequency; Laser ablation; Micromachining; Optical pulse generation; Optical pulses; Power generation; Pulsed laser deposition; Silicon; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-3901-0
Electronic_ISBN :
978-1-4244-2906-6
Type :
conf
DOI :
10.1109/IPGC.2008.4781515
Filename :
4781515
Link To Document :
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