• DocumentCode
    2716254
  • Title

    Kelvin test structure for measuring contact resistance of shallow junctions

  • Author

    Nanver, L.K. ; Goudena, E.J.G. ; Slabbekoorn, John

  • Author_Institution
    Inst. of Microelectron. & Submicron Technol., Delft Univ. of Technol., Netherlands
  • fYear
    1996
  • fDate
    25-28 Mar 1996
  • Firstpage
    241
  • Lastpage
    245
  • Abstract
    A Kelvin contact resistance test structure has been developed for accurate and direct measurement of highly-doped shallow n+ and p+ junctions, which may be self-aligned to the contact window. The structure is easily integrated in many IC-processes. Results are presented for high-dose arsenic implantations, where excimer laser annealing of the contact windows yields contact resistivities below 10 -7 Ωcm2
  • Keywords
    contact resistance; electric resistance measurement; semiconductor junctions; IC process; Kelvin test structure; Si:As; contact resistance measurement; contact window; excimer laser annealing; high-dose arsenic implantation; self-aligned structure; shallow junction; Annealing; Automatic testing; Conductivity; Contact resistance; Electrical resistance measurement; Integrated circuit testing; Kelvin; Microelectronics; Quantum cascade lasers; Surface resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures, 1996. ICMTS 1996. Proceedings. 1996 IEEE International Conference on
  • Conference_Location
    Trento
  • Print_ISBN
    0-7803-2783-7
  • Type

    conf

  • DOI
    10.1109/ICMTS.1996.535654
  • Filename
    535654
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2716254