K-band Carbon Nanotube FET Operation

Author

Zhang, Hong ; Pesetski, Aaron A. ; Baumgardner, James E. ; Murduck, James M. ; Przybysz, John X. ; Adam, John D.

Author_Institution

Northrop Grumman Corp., Baltimore, MD

fYear

2006

fDate

11-16 June 2006

Firstpage

1688

Lastpage

1691

Abstract

A top-gated carbon nanotube (CNT) field-effect transistor (FET) was fabricated on a quartz substrate using a single nanotube grown by CVD and a sputtered Si_xN_y gate dielectric. Measurements of the mixing products produced by two closely spaced microwave input signals applied to the gate of the FET circumvented the problems associated with measuring high impedance RF devices in 50 Omega systems. The frequency-independent performance of a CNT FET, at frequencies as high as 23 GHz, was demonstrated for the first time. This observed operating frequency represents a significant breakthrough in the realization of carbon nanotube-based electronics for high frequency applications

Keywords

carbon nanotubes; chemical vapour deposition; microwave field effect transistors; sputtering; 50 ohm; CVD; carbon nanotube; carbon nanotube-based electronics; field-effect transistor; microwave input signals; quartz substrate; radiofrequency devices; CNTFETs; Carbon nanotubes; Dielectric measurements; Dielectric substrates; Frequency; Impedance measurement; K-band; Microwave FETs; Microwave devices; Microwave measurements; Carbon nanotube; field effect transistor; measurement; microwave; mixer;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2006. IEEE MTT-S International

Conference_Location

San Francisco, CA

ISSN

0149-645X

Print_ISBN

0-7803-9541-7

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2006.249684

Filename

4015270