A New Regenerative Divider by Four up to 160 GHz in SiGe Bipolar Technology

Author

Trotta, Saverio ; Knapp, Herbert ; Meister, Thomas F. ; Aufinger, Klaus ; Bock, J. ; Dehlink, Bernhard ; Simburger, Werner ; Scholtz, Arpad L.

Author_Institution

Infineon Technol. AG, Munich

fYear

2006

fDate

11-16 June 2006

Firstpage

1709

Lastpage

1712

Abstract

A new topology for a very high speed regenerative divider by four is proposed. The circuit uses a double mixer to directly divide the input frequency by four. A validation chip has been developed in a 225 GHz f_T SiGe bipolar technology. The circuit operates in a frequency range from 80 GHz to 160 GHz while consuming a 650 mW from a -5.5 V supply

Keywords

Ge-Si alloys; bipolar transistor circuits; frequency dividers; millimetre wave mixers; -5.5 V; 650 mW; 80 to 160 GHz; Gilbert cell; Miller divider; SiGe; double mixer; frequency dividers; regenerative divider; semiconductor bipolar technology; very high speed integrated circuit; CMOS technology; Circuit topology; Frequency conversion; Frequency measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Instruments; Legged locomotion; Low pass filters; Silicon germanium; Gilbert cell; Miller divider; SiGe; frequency dividers; regenerative divider;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2006. IEEE MTT-S International

Conference_Location

San Francisco, CA

ISSN

0149-645X

Print_ISBN

0-7803-9541-7

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2006.249708

Filename

4015276