DocumentCode :
2716457
Title :
Terahertz quantum cascade laser in the InGaAs/GaAsSb material system
Author :
Deutsch, C. ; Benz, A. ; Detz, H. ; Nobile, M. ; Andrews, A.M. ; Klang, P. ; Schrenk, W. ; Strasser, G. ; Unterrainer, K.
Author_Institution :
Photonics Inst., Vienna Univ. of Technol., Vienna, Austria
fYear :
2010
fDate :
5-10 Sept. 2010
Firstpage :
1
Lastpage :
2
Abstract :
We demonstrate a terahertz quantum cascade laser based on the aluminum-free In0.53Ga0.47As/GaAs0.51Sb0.49 material system. Processed in a double metal waveguide configuration, disk devices reach operating temperatures up to 105 K and the spectral emission lies between 3.6 and 4.1 THz.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; quantum cascade lasers; terahertz wave devices; terahertz wave spectra; waveguide lasers; In0.53Ga0.47As-GaAs0.51Sb0.49; disk devices; double metal waveguide configuration; frequency 3.6 THz to 4.1 THz; spectral emission; terahertz quantum cascade laser; Indium gallium arsenide; Metals; Optical reflection; Optical sensors; Performance evaluation; Quantum cascade lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
Type :
conf
DOI :
10.1109/ICIMW.2010.5612814
Filename :
5612814
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2716457
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