Millimeter-wave chip set for 77–81 GHz automotive radar application

Author

Demirel, N. ; Severino, R.R. ; Ameziane, C. ; Taris, T. ; Bégueret, J-B ; Kerhervé, E. ; Mariano, A. ; Pache, D. ; Belot, D.

Author_Institution

IMS Lab., Univ. of Bordeaux, Bordeaux, France

fYear

2011

fDate

26-29 June 2011

Firstpage

253

Lastpage

256

Abstract

A millimeter-wave (mmW) chipset for 77-81 GHz automotive radar has been developed in 0.13μm SiGe HBT technology. This work presents the performances of an integrated Low Noise Amplifier (LNA), a Power Amplifier (PA), a down-converting Mixer, and also a Voltage Controlled Oscillator (VCO). For successful implementation of the circuit, considerations on the reliability of the design have been taken into account. Measurements on all circuits confirm the feasibility of mmW front-end using silicon based technologies for W-band application.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; low noise amplifiers; millimetre wave bipolar transistors; millimetre wave mixers; millimetre wave oscillators; millimetre wave power amplifiers; network synthesis; road vehicle radar; semiconductor materials; voltage-controlled oscillators; HBT technology; LNA; SiGe; VCO; W-band application; automotive radar application; down-converting mixer; frequency 77 GHz to 81 GHz; integrated low noise amplifier; millimeter-wave chip set; power amplifier; size 0.13 mum; voltage controlled oscillator; Automotive engineering; Gain; Impedance matching; Mixers; Radar; Radio frequency; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

New Circuits and Systems Conference (NEWCAS), 2011 IEEE 9th International

Conference_Location

Bordeaux

Print_ISBN

978-1-61284-135-9

Type

conf

DOI

10.1109/NEWCAS.2011.5981303

Filename

5981303