Title :
77 GHz SiGe based bipolar transceivers for automotive radar applications — An industrial perspective
Author :
Maurer, Linus ; Haider, Günter ; Knapp, Herbert
Author_Institution :
Automotive Sense&Control, DICE GmbH & Co KG, Linz, Austria
Abstract :
Radar sensors operating in the 76-81 GHz range are considered key for Advanced Driver Assistance Systems (ADAS) like adaptive cruise control (ACC), collision mitigation and avoidance systems (CMS) or lane change assist (LCA). These applications are the next wave in automotive safety systems and have thus generated increased interest in lower-cost solutions especially for the mm-wave front-end (FE) section. Today, most of the radar sensors in this frequency range use GaAs based FEs. These multi-chip GaAs FEs are a main cost driver in current radar sensors due to their low integration level. The step towards monolithic microwave integrated circuits (MMIC) based on a 200 GHz ft silicon-germanium (SiGe) technology integrating all needed RF building blocks (mixers, VCOs, dividers, buffers, PAs) on an single die does not only lead to cost reductions but also benefits the testability of these MMICs. This is especially important in the light of upcoming functional safety standards like ASIL-D and ISO26262.
Keywords :
Ge-Si alloys; MIMIC; automotive electronics; millimetre wave mixers; millimetre wave oscillators; millimetre wave power amplifiers; radio transceivers; road vehicle radar; semiconductor materials; voltage-controlled oscillators; ASIL-D; ISO26262; MMIC; RF building blocks; SiGe; VCO; adaptive cruise control; advanced driver assistance systems; automotive radar applications; automotive safety systems; bipolar transceivers; buffers; collision mitigation avoidance systems; dividers; frequency 200 GHz; frequency 77 GHz; industrial perspective; lane change assist; mixers; mm-wave front-end section; monolithic microwave integrated circuits; power amplifiers; radar sensors; silicon-germanium technology; Automotive engineering; MMICs; Mixers; Radar applications; Receivers; Silicon germanium;
Conference_Titel :
New Circuits and Systems Conference (NEWCAS), 2011 IEEE 9th International
Conference_Location :
Bordeaux
Print_ISBN :
978-1-61284-135-9
DOI :
10.1109/NEWCAS.2011.5981304