DocumentCode
2716573
Title
CMOS IC transient radiation effects investigations, model verification and parameter extraction with the test structures laser simulation tests
Author
Nikiforov, A.Y. ; Chumakov, A.I. ; Skorobogatov, P.K.
Author_Institution
Specialized Electron. Syst., Moscow, Russia
fYear
1996
fDate
25-28 Mar 1996
Firstpage
253
Lastpage
258
Abstract
The specialized test chip is designed and investigated for CMOS RAMs dose rate and single event effects research. The laser simulation tests adequacy, taking into account shadowing effect, is analyzed and provided. The original “RADON-5” laser simulator is designed and used as an effective tool for test structures transient radiation models verification and parameter extraction
Keywords
CMOS memory circuits; integrated circuit modelling; integrated circuit testing; laser beam effects; random-access storage; transient analysis; CMOS IC; RADON-5 laser simulation; RAM; dose rate; parameter extraction; shadowing; single event effect; test chip; transient radiation model; Analytical models; CMOS integrated circuits; Integrated circuit modeling; Laser modes; Optical design; Parameter extraction; Radiation effects; Semiconductor device modeling; Shadow mapping; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 1996. ICMTS 1996. Proceedings. 1996 IEEE International Conference on
Conference_Location
Trento
Print_ISBN
0-7803-2783-7
Type
conf
DOI
10.1109/ICMTS.1996.535656
Filename
535656
Link To Document