DocumentCode :
2716705
Title :
A new test structure methodology for MOS hot carrier reliability
Author :
Lee, M.
Author_Institution :
Fac. of Eng., Dongshin Univ., Naju, South Korea
fYear :
1996
fDate :
25-28 Mar 1996
Firstpage :
261
Lastpage :
265
Abstract :
Source bus resistance, which causes body effect, from a test structure can not be negligible. The body effect on the test structure is closely related to the saturation current (Idsat) degradation, which is a more meaningful quantity for many circuit applications as this has a strong correlation to switching speed. It is found that the Idsat degradation can be improved, depending on the test structure. So, in this study, the new test structure is built to minimize the body effect and extends the deep submicron MOS device lifetime. Concept for the new test structure is that higher drive devices such as W/L=10/0.25, 10/0.3(μm/μm) are assigned to the closest pin of the common source and lower drive devices such as W/L=0.4/10, 0.6/10 and 1/10(μm/μm) are possibly assigned to farther pin from the common source. Further, the common source is assigned to the center from the old test structure to minimize the resistance at both ends. As a result, it is promising to evaluate the HCI effective lifetime accurately and is proved to be useful to characterize MOS devices more accurately. Hence HCI reliability with the new test structure is not only promising for characterization automation, but will be used for VLSI/ULSI designs, proposing a new approach to estimate more accurate lifetime of the saturation drain current degradation for MOSFETs
Keywords :
MIS devices; carrier lifetime; hot carriers; semiconductor device reliability; semiconductor device testing; MOSFET; body effect; deep submicron MOS device; hot carrier injection; hot carrier lifetime; hot carrier reliability; saturation current; source bus resistance; test structure; Automatic testing; Circuit testing; Degradation; Design automation; Hot carriers; Human computer interaction; Immune system; Life testing; MOS devices; Switching circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures, 1996. ICMTS 1996. Proceedings. 1996 IEEE International Conference on
Conference_Location :
Trento
Print_ISBN :
0-7803-2783-7
Type :
conf
DOI :
10.1109/ICMTS.1996.535657
Filename :
535657
Link To Document :
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