Fully integrated CMOS avalanche photodiode and distributed-gain TIA for CW-fNIRS

Author

Kamrani, Ehsan ; Sawan, Mohamad

Author_Institution

Electr. Eng. Dept., Ecole Polytech. de Montreal, Montreal, QC, Canada

fYear

2011

fDate

10-12 Nov. 2011

Firstpage

317

Lastpage

320

Abstract

This paper introduces a CMOS silicon avalanche photodiode (SiAPD) integrated on-chip with an optical trans-impedance amplifier (TIA) to be used in a fNIRS photo-receiver front-end. Proposed SiAPD has the avalanche gain of 200 with the depletion layer thickness of greater than 40μm, its breakdown voltage is 6V and its photon absorption efficiency is 95% and 40% at 700nm and 900nm respectively. The proposed TIA also has a low power consumption (4mW), high transimpedance gain (up to 250MV/A), tunable BW (100KHz-1MHz) and very low input and output noise (280fA/√Hz and 1.5mV/√Hz) all the essential requirements for fNIRS photoreceiver front-end. This circuit is developed using 0.35 CMOS technology and the measurement results verifying the efficiency and preference of this design comparing to the similar available circuits.

Keywords

CMOS integrated circuits; avalanche photodiodes; operational amplifiers; silicon; CMOS avalanche photodiode; CW-fNIRS; breakdown voltage; depletion layer thickness; distributed gain TIA; fNIRS photoreceiver front end; frequency 100 kHz to 1 MHz; input noise; optical transimpedance amplifier; output noise; photon absorption efficiency; power consumption; silicon avalanche photodiode; transimpedance gain; voltage 6 V; wavelength 700 nm; wavelength 900 nm; Avalanche photodiodes; CMOS integrated circuits; CMOS technology; Layout; Noise; Optical fiber amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Biomedical Circuits and Systems Conference (BioCAS), 2011 IEEE

Conference_Location

San Diego, CA

Print_ISBN

978-1-4577-1469-6

Type

conf

DOI

10.1109/BioCAS.2011.6107791

Filename

6107791