4-GHz Low-Phase-Noise Transformer-Based Top-Series GaInP/GaAs HBT QVCO

Author

Meng, C.C. ; Tseng, S.C. ; Chang, Y.-W. ; Su, J.Y. ; Huang, G.W.

Author_Institution

Dept. of Commun. Eng., National Chiao Tung Univ., Hsin-Chu

fYear

2006

fDate

11-16 June 2006

Firstpage

1809

Lastpage

1812

Abstract

The fully integrated GaInP/GaAs heterojunction bipolar transistor (HBT) transformer-based top-series quadrature voltage controlled oscillator (QVCO) is demonstrated at 4 GHz. The transformers on the semi-insulating GaAs substrate possess good electrical properties at high frequencies. The quadrature VCO at 4.1 GHz has phase noise of -120 dBc/Hz at 1MHz offset frequency, output power of 2 dBm and the figure of merit (FOM) -178 dBc/Hz

Keywords

III-V semiconductors; bipolar integrated circuits; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave oscillators; transformers; voltage-controlled oscillators; 4 GHz; GaInP-GaAs; heterojunction bipolar transistor; phase noise; semi-insulating substrate; top-series coupling; transformer-based top-series quadrature voltage controlled oscillator; 1f noise; Coupling circuits; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Phase noise; Q factor; Ring oscillators; Transformers; Voltage-controlled oscillators; GaInP/GaAs heterojunction bipolar transistor (HBT); phase noise; quadrature voltage controlled oscillator (QVCO); top-series coupling; transformer;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2006. IEEE MTT-S International

Conference_Location

San Francisco, CA

ISSN

0149-645X

Print_ISBN

0-7803-9541-7

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2006.249746

Filename

4015306