A High Gain Doherty Amplifier Using Embedded Drivers

Author

Ghim, Jae-Gon ; Cho, Kyoung-Joon ; Kim, Jong-Heon ; Stapleton, Shawn P.

Author_Institution

Dept. of Radio Sci. & Eng., Kwangwoon Univ.

fYear

2006

fDate

11-16 June 2006

Firstpage

1838

Lastpage

1841

Abstract

A high power and high gain Doherty amplifier is designed by using embedded driver amplifiers in the final stage. The operational characteristics of a two-stage Doherty amplifier are analyzed, as a function of the two-stage peaking amplifier gate biases. The peaking amplifier´s driver has a significant effect on the total efficiency of the Doherty amplifier by reducing the leakage current. The driver stages and final output stages are implemented using two single-ended MRF21045s and a single push-pull packaged MRF5P21180. This two-stage Doherty amplifier demonstrated 27 dB gain with a PAE of 22 % at 15 W average output power, backed off 10 dB

Keywords

amplifiers; differentiating circuits; driver circuits; leakage currents; 27 dB; embedded driver amplifiers; leakage current reduction; peaking amplifier gate bias; peaking compensation line; push-pull packaged MRF5P21180; single-ended MRF21045; two-stage Doherty amplifier; Design engineering; Driver circuits; High power amplifiers; Leakage current; Operational amplifiers; Packaging; Peak to average power ratio; Power amplifiers; Power dividers; Power engineering and energy; Doherty amplifier; gate bias; peaking amplifier; peaking compensation line;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2006. IEEE MTT-S International

Conference_Location

San Francisco, CA

ISSN

0149-645X

Print_ISBN

0-7803-9541-7

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2006.249753

Filename

4015313