DocumentCode :
2717037
Title :
A Compact 16 Watt X-Band GaN-MMIC Power Amplifier
Author :
Klockenhoff, Harald ; Behtash, Reza ; Würfl, Joachim ; Heinrich, Wolfgang ; Tränkle, Günther
Author_Institution :
Ferdinand-Braun-Inst., Berlin
fYear :
2006
fDate :
11-16 June 2006
Firstpage :
1846
Lastpage :
1849
Abstract :
GaN MMIC power amplifiers for X-band applications are presented delivering more than 16 W of W output power while being extremely small in chip size. With a single-device amplifier on a 1.8times2.2 mm2 chip 7.8 W output power at 8 GHz are achieved with a maximum PAE of 44%. On a chip of 2.2times3.3 mm2 size only, a two-stage amplifier is realized with 18 dB of linear gain and 16 W output power at 8 GHz. PAE of the MMIC reaches 30%
Keywords :
III-V semiconductors; MMIC power amplifiers; gallium compounds; wide band gap semiconductors; 16 W; 18 dB; 8 GHz; GaN; X-band MMIC power amplifier; single-device amplifier; two-stage amplifier; Gain; Gallium nitride; Gold; MIM capacitors; MMICs; Ohmic contacts; Power amplifiers; Power generation; Pulse amplifiers; Silicon carbide; Coplanar Wave Guide (CPW); Gallium Nitride; MMIC Power Amplifier; X-Band;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location :
San Francisco, CA
ISSN :
0149-645X
Print_ISBN :
0-7803-9541-7
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2006.249755
Filename :
4015315
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2717037
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