DocumentCode
2717066
Title
Observation of light emissions from hot electrons and latch-up at the cleaved surface of CMOS structures
Author
Aoki, Takahiro
Author_Institution
NTT LSI Labs., Atsugi, Japan
fYear
1996
fDate
25-28 Mar 1996
Firstpage
279
Lastpage
282
Abstract
Hot-electron-induced and latchup-induced photon emissions can be directly observed at the cleaved surface of CMOS test structures using the two-dimensional photon counting system. This observation enables an accurate photon analysis with a high spatial resolution because, unlike in conventional top surface observation, there is no masking by the aluminum electrode
Keywords
CMOS integrated circuits; electroluminescence; hot carriers; integrated circuit measurement; integrated circuit reliability; large scale integration; photon counting; CMOS structures; LSI; cleaved surface; hot electrons; latch-up; light emissions; photon analysis; spatial resolution; two-dimensional photon counting system; Band pass filters; Current measurement; Electric breakdown; Electric variables measurement; Electrons; MOSFET circuits; Neodymium; Spontaneous emission; System testing; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 1996. ICMTS 1996. Proceedings. 1996 IEEE International Conference on
Conference_Location
Trento
Print_ISBN
0-7803-2783-7
Type
conf
DOI
10.1109/ICMTS.1996.535660
Filename
535660
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