Title :
A 1/2 Watt High Linearity and Wide Bandwidth PHEMT Driver Amplifier MMIC for Millimeter-Wave Applications
Author :
Chen, Shuoqi ; Nayak, Sabyasachi
Author_Institution :
TriQuint Semicond., Richardson, TX
Abstract :
This paper presents a high linearity and wide bandwidth driver/power amplifier MMIC, which covered entire Q-band. The MMIC amplifier was designed for 38GHz point-to-point radio application using TriQuint´s 0.15 mum power GaAs PHEMT technology. This balanced three-stage power amplifier, with chip size of 2.9 mm2 on 100 mum GaAs substrate, achieved 27 dBm P1dB output power with nominal 18 dB small signal gain over 33-40 GHz. The RF performance of this power amplifier can be further extended to cover frequencies of 33-48 GHz. Meanwhile, high output linearity was measured with lower than -34 dBc third order intermodulation (IM3) at 19 dBm per tone output power level. This state-of-the-art millimeter wave power amplifier sets the benchmark of linearity and bandwidth for a single MMIC chip reported to date among Q-band medium power amplifiers
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; driver circuits; gallium arsenide; millimetre wave power amplifiers; wide band gap semiconductors; 0.15 micron; 0.5 W; 18 dB; 33 to 48 GHz; GaAs; MMIC amplifier; PHEMT driver amplifier; PHEMT technology; Q-band; millimeter wave power amplifier; millimeter-wave applications; point-to-point radio application; wide bandwidth amplifier; Bandwidth; Driver circuits; Gallium arsenide; Linearity; MMICs; Millimeter wave technology; PHEMTs; Power amplifiers; Power generation; Radiofrequency amplifiers; MMICs; Millimeter wave amplifier; Millimeter wave integrated circuits; power amplifiers;
Conference_Titel :
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9541-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2006.249777