Title :
A 45 μW bias power, 34 dB gain reflection amplifier exploiting the tunneling effect for RFID applications
Author :
Amato, Francesco ; Peterson, Christopher W. ; Degnan, Brian P. ; Durgin, Gregory D.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
RFID applications have power constraints that limit RF tags to short range communications. This article presents the design procedures, validated by experimental results, to make a low-powered reflection amplifier that exploits the quantum mechanical tunneling effect to dramatically enhance the range of passive or semi-passive tags. A return gain of 34.4 dB with bias power of 45 μW at 5.45 GHz and a return gain of 22.1 dB with a bias power of 47 μW at 5.55 GHz have been observed for impinging RF power levels as low as -70 dBm. These results allow, for certain devices, a factor of 7 range improvement to the RFID link while keeping the bias power 10 times lower than any other available reflection amplifier. This prototype could play a key role in enhancing RFID communication ranges without significantly affecting the low power budget typical for RFID technology; the design can be implemented in currently available semi-passive tags and opens the door for a new generation of long-range, passive/semi-passive transponders.
Keywords :
amplifiers; radio links; radiofrequency identification; RFID applications; RFID communication; RFID link; bias power; gain 34 dB; gain reflection amplifier; passive lags; passive-semi-passive transponders; power constraints; quantum mechanical tunneling effect; reflection amplifier; semipassive tags; Gain; Modulation; Radio frequency; Radiofrequency identification; Semiconductor diodes; Sensitivity; Tunneling; RFID; backscatter radio; low powered RFID; modulation factor; quantum tunneling; radio propagation; reflection amplifier; tunnel diode;
Conference_Titel :
RFID (RFID), 2015 IEEE International Conference on
Conference_Location :
San Diego, CA
DOI :
10.1109/RFID.2015.7113084