Title :
Terahertz photomixing in strained silicon MODFET
Author :
Meziani, Y.M. ; Moutaouakil, A.E. ; Velazquez, E. ; Diez, E. ; Fobelets, K. ; Otsuji, T.
Author_Institution :
Fac. de Cienc., Salamanca Univ., Salamanca, Spain
Abstract :
Strained-Si modulation doped · eld effect transistors have been studied as a photomixer within terahertz range. It was subjected to two CW lasers where Δf=|f1-f2|=4 THz. A clear signal was observed with maximum located at around Vg=-0.15V and interpreted as due to the oscillation of the plasma waves under the gate bias.
Keywords :
high electron mobility transistors; terahertz wave imaging; gate bias; modulation doped field effect transistor; oscillation; photomixer; plasma waves; strained silicon MODFET; terahertz photomixing; terahertz range; HEMTs; Logic gates; MODFETs; Oscillators; Plasma waves; Resonant frequency; Silicon;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5612856
