DocumentCode :
2717129
Title :
Ultra Compact X-Band GaInP/GaAs HBT MMIC amplifiers : 11W, 42% of PAE on 13mm2 and 8.7W, 38% of PAE on 9mm2
Author :
Piotrowicz, S. ; Chartier, E. ; Jacquet, J.C. ; Floriot, D. ; Obregon, J. ; Dueme, P. ; Delaire, J. ; Mancuso, Y.
Author_Institution :
Alcatel-Thales 3-5 Lab., Marcoussis
fYear :
2006
fDate :
11-16 June 2006
Firstpage :
1867
Lastpage :
1870
Abstract :
HBT power technology offers an excellent compromise for high power and high efficiency amplifiers up to the Ku band. In order to reduce cost and size of THALES T/R modules, we developed compact high power MMIC amplifiers with innovative transistor designs in X-band. In this paper, we present the performances of two GaInP/GaAs MMIC power amplifiers. The first one delivers an output power of 11.2W with 42.3% of PAE with a chip size of 13mm2. It represents a power density of 0.86W/mm2 of GaAs area. An advanced version on only 9 mm2 of GaAs gives an output power of 8.7W with 38% of PAE. This corresponds to a power density of 0.96W/mm2 of GaAs. To our knowledge, this is the state of the art performances in terms of power density per GaAs surface for MMIC power amplifiers above 8W. These power MMIC circuits constitute very attractive chips for phased array antennas, airborne radar, telecommunications or satellite links
Keywords :
III-V semiconductors; MMIC power amplifiers; bipolar MMIC; gallium arsenide; gallium compounds; wide band gap semiconductors; 11.2 W; 8.7 W; GaAs; GaInP; X-band HBT MMIC amplifiers; airborne radar; heterojunction bipolar transistors; phased array antennas; power MMIC amplifiers; satellite links; telecommunications link; Antenna arrays; Circuits; Costs; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; MMICs; Phased arrays; Power amplifiers; Power generation; Heterojunction bipolar transistors; MMIC; power amplifier;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location :
San Francisco, CA
ISSN :
0149-645X
Print_ISBN :
0-7803-9541-7
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2006.249778
Filename :
4015320
Link To Document :
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