Title :
Monte Carlo study of ballistic effects in high speed InAs-based quantum hot electron transistor
Author :
Sabatini, G. ; Palermo, C. ; Ziadé, P. ; Laurent, T. ; Marinchio, H. ; Rodilla, H. ; Mateos, J. ; Gonzàlez, T. ; Teissier, R. ; Varani, L.
Author_Institution :
Inst. d´´Electron. du Sud, Univ. of Montpellier 2, Montpellier, France
Abstract :
By means of a Monte Carlo simulation, we have studied the collector transit region of an innovative InAs/AlSb quantum hot electron transistor constituted by a 100 nm-long InAs bulk region. This original vertical transport device has the potential to efficiently exploit the unrivalled transport properties of InAs to reach THz frequencies.
Keywords :
III-V semiconductors; Monte Carlo methods; aluminium compounds; ballistic transport; indium compounds; semiconductor quantum dots; submillimetre wave transistors; InAs-AlSb; Monte Carlo simulation; THz frequencies; ballistic effects; collector transit region; high speed quantum dot electron transistor; vertical transport device; Cathodes; Electric fields; Materials; Monte Carlo methods; Phonons; Scattering; Transistors;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5612857
