Title :
A Highly Survivable 3-7 GHz GaN Low-Noise Amplifier
Author :
Rudolph, Matthias ; Behtash, Reza ; Hirche, Klaus ; Wurfl, Joachim ; Heinrich, Wolfgang ; Tränkle, Günther
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlinx
Abstract :
A highly rugged low-noise GaN MMIC amplifier is presented that operates in the frequency band 3-7 GHz. A noise figure NF below 2.3 dB is measured from 3.5 to 7 GHz, with NF < 1.8 dB between 5 and 7 GHz. The survivability of the LNA was assessed by several stress-tests, injecting in the input up to 36dBm at 4 GHz for 16 hours. To the authors knowledge, these are the most severe survivability tests for these circuits reported in the literature so far
Keywords :
III-V semiconductors; MMIC amplifiers; gallium compounds; integrated circuit testing; low noise amplifiers; 3 to 7 GHz; GaN; LNA; MMIC amplifier; amplifier noise; integrated circuit noise; low-noise amplifier; microwave FET amplifiers; Circuits; Gallium nitride; Low-noise amplifiers; MMICs; Microwave amplifiers; Noise figure; Noise measurement; Power measurement; Semiconductor device noise; Semiconductor optical amplifiers; Amplifier noise; Integrated circuit noise; MMIC amplifiers; Microwave FET amplifiers; Noise; Semiconductor device noise;
Conference_Titel :
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9541-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2006.249786
