A Highly Survivable 3-7 GHz GaN Low-Noise Amplifier

Author

Rudolph, Matthias ; Behtash, Reza ; Hirche, Klaus ; Wurfl, Joachim ; Heinrich, Wolfgang ; Tränkle, Günther

Author_Institution

Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlinx

fYear

2006

fDate

11-16 June 2006

Firstpage

1899

Lastpage

1902

Abstract

A highly rugged low-noise GaN MMIC amplifier is presented that operates in the frequency band 3-7 GHz. A noise figure NF below 2.3 dB is measured from 3.5 to 7 GHz, with NF < 1.8 dB between 5 and 7 GHz. The survivability of the LNA was assessed by several stress-tests, injecting in the input up to 36dBm at 4 GHz for 16 hours. To the authors knowledge, these are the most severe survivability tests for these circuits reported in the literature so far

Keywords

III-V semiconductors; MMIC amplifiers; gallium compounds; integrated circuit testing; low noise amplifiers; 3 to 7 GHz; GaN; LNA; MMIC amplifier; amplifier noise; integrated circuit noise; low-noise amplifier; microwave FET amplifiers; Circuits; Gallium nitride; Low-noise amplifiers; MMICs; Microwave amplifiers; Noise figure; Noise measurement; Power measurement; Semiconductor device noise; Semiconductor optical amplifiers; Amplifier noise; Integrated circuit noise; MMIC amplifiers; Microwave FET amplifiers; Noise; Semiconductor device noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2006. IEEE MTT-S International

Conference_Location

San Francisco, CA

ISSN

0149-645X

Print_ISBN

0-7803-9541-7

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2006.249786

Filename

4015328