Plastic Packaged High Linearity Low Noise Amplifier for 12-30GHz Multi-band Telecom Applications

Author

Byk, Estelle ; Quentin, Pierre ; Camiade, Marc ; Tranchant, Sylvie

Author_Institution

Route Departementale, United Monolithic Semicond., Orsay

fYear

2006

fDate

11-16 June 2006

Firstpage

1903

Lastpage

1906

Abstract

The packaged MMIC design and measured performance of from 12 to 30GHz are reported in this paper. A mature 0.25mum gate length low noise pseudomorphic HEMT technology has been used with a BCB-based protection allowing easy and high reliability chip integration into plastic packages. A standard plastic QFN SMD package has been successfully used: 25dB typical gain has been measured with less than 2.0 dB noise figure in all the frequency band from 12 to 30GHz and more than 26dBm output IP3 has been measured in the 18-26GHz frequency band

Keywords

HEMT integrated circuits; MMIC amplifiers; integrated circuit packaging; low noise amplifiers; surface mount technology; 0.25 micron; 12 to 30 GHz; 25 dB; BCB-based protection; QFN SMD package; low noise amplifier; multi-band telecom applications; packaged MMIC design; plastic package; pseudomorphic HEMT; Frequency measurement; Gain measurement; Linearity; Low-noise amplifiers; MMICs; Noise measurement; PHEMTs; Plastic packaging; Semiconductor device measurement; Telecommunications; LNA; MMICs; OIP3; Package; QFN; SMD;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2006. IEEE MTT-S International

Conference_Location

San Francisco, CA

ISSN

0149-645X

Print_ISBN

0-7803-9541-7

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2006.249787

Filename

4015329