Title :
Plastic Packaged High Linearity Low Noise Amplifier for 12-30GHz Multi-band Telecom Applications
Author :
Byk, Estelle ; Quentin, Pierre ; Camiade, Marc ; Tranchant, Sylvie
Author_Institution :
Route Departementale, United Monolithic Semicond., Orsay
Abstract :
The packaged MMIC design and measured performance of from 12 to 30GHz are reported in this paper. A mature 0.25mum gate length low noise pseudomorphic HEMT technology has been used with a BCB-based protection allowing easy and high reliability chip integration into plastic packages. A standard plastic QFN SMD package has been successfully used: 25dB typical gain has been measured with less than 2.0 dB noise figure in all the frequency band from 12 to 30GHz and more than 26dBm output IP3 has been measured in the 18-26GHz frequency band
Keywords :
HEMT integrated circuits; MMIC amplifiers; integrated circuit packaging; low noise amplifiers; surface mount technology; 0.25 micron; 12 to 30 GHz; 25 dB; BCB-based protection; QFN SMD package; low noise amplifier; multi-band telecom applications; packaged MMIC design; plastic package; pseudomorphic HEMT; Frequency measurement; Gain measurement; Linearity; Low-noise amplifiers; MMICs; Noise measurement; PHEMTs; Plastic packaging; Semiconductor device measurement; Telecommunications; LNA; MMICs; OIP3; Package; QFN; SMD;
Conference_Titel :
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9541-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2006.249787
