Title :
Non-bias inspection of electrical failures in LSI interconnects using LTEM prototype system
Author :
Yamashita, M. ; Otani, C. ; Matsumoto, T. ; Midoh, Y. ; Miura, K. ; Nikawa, K. ; Nakamae, K. ; Tonouchi, M.
Author_Institution :
RIKEN ASI, Sendai, Japan
Abstract :
Logic LSI chips fabricated by 180nm process were measured by a prototype system of the laser terahertz emission microscope (LTEM). By comparing the LTEM images between a normal circuit and a defective one, p-n junction connected to the defective interconnect such as open or short circuits can be successfully determined under non-bias measurement condition. This result indicates that LTEM can be a useful tool which realizes a non-bias measurement of the defect localization in failure analysis of LSIs fabricated by 180nm process.
Keywords :
electrical faults; inspection; integrated circuit interconnections; large scale integration; p-n junctions; LSI interconnects; LTEM images; LTEM prototype system; defective interconnect; electrical failures; laser terahertz emission microscope; logic LSI chips; nonbias inspection; nonbias measurement condition; normal circuit; p-n junction; Design automation; Integrated circuit interconnections; Large scale integration; Microscopy; P-n junctions; Prototypes; Semiconductor lasers;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5612864
