Title :
Advantages of GaSb/AlSb LO phonon depopulation terahertz quantum cascade laser on GaAs substrate
Author :
Yasuda, Hiroaki ; Hosako, Iwao ; Sekine, Norihiko ; Patrashin, Mikhail
Author_Institution :
National Inst. of Inf. & Commun. Technol., Tokyo
Abstract :
A terahertz quantum cascade laser (THz-QCL) using a resonant longitudinal optical (LO) phonon depopulation scheme was successfully demonstrated by MIT´s group. We fabricated QCL structures from both a GaAs/AlGaAs material system and a GaSb/AlSb system using this scheme. The characteristics of these QCLs were compared experimentally. A smaller threshold electric field was expected for the GaSb/AlSb QCL because GaSb has smaller LO phonon energy than that of GaAs. Experimental results indicated that the threshold electric field of the GaSb/AlSb QCL was 3.2 kV/cm. These results mean that the GaSb/AlSb QCL is suitable for low input power operation. Furthermore, the GaSb/AlSb QCL on a GaAs substrate provides high optical confinement without a complicated fabrication process
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; interface phonons; quantum cascade lasers; submillimetre wave lasers; substrates; GaSb-AlSb-GaAs; optical confinement; phonon depopulation; phonon energy; submillimeter wave generation; terahertz quantum cascade laser; threshold electric field; Biomedical optical imaging; Conducting materials; Gallium arsenide; Optical materials; Optical scattering; Optical sensors; Phonons; Quantum cascade lasers; Resonance; Substrates; Semiconductor lasers; submillimeter wave generation;
Conference_Titel :
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9541-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2006.249789
