Silicon Micromachined W-Band Folded and Straight Waveguides Using DRIE Technique

Author

Li, Yuan ; Kirby, Pete L. ; Papapolymerou, John

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA

fYear

2006

fDate

11-16 June 2006

Firstpage

1915

Lastpage

1918

Abstract

A silicon micromachined W-band folded waveguide and straight waveguide using deep reactive ion etching (DRIE) technology with stacked silicon substrates are presented for the first time. The dimensions of the folded waveguide are optimized using Ansoft´s HFSS. The tolerances from the fabrication are analyzed using a straight waveguide. The measured insertion loss for the straight waveguide is between 0.23 ~ 0.42dB/cm over 85GHz ~ 105GHz. The insertion loss for the folded waveguide is between 0.41 ~ 0.69dB/cm over 90GHz ~ 110GHz. The result shows the waveguides have competitive performance compared to a commercial standard waveguide

Keywords

micromachining; rectangular waveguides; silicon; sputter etching; 75 to 110 GHz; Ansoft HFSS; DRIE; Si; W-band waveguide; deep reactive ion etching; folded wavguide; insertion loss; micromachining; rectangular waveguide; straight waveguides; traveling wave tubes; Biomedical measurements; Costs; Insertion loss; Laser radar; Passivation; Protection; Rectangular waveguides; Silicon; Waveguide components; Wet etching; Deep reactive ion etching; Micromachining; Rectangular Waveguide; Traveling Wave Tubes;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2006. IEEE MTT-S International

Conference_Location

San Francisco, CA

ISSN

0149-645X

Print_ISBN

0-7803-9541-7

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2006.249790

Filename

4015332