Title :
A new approach to determine active doping profiles of bipolar transistors using electrical measurements and a physical device simulator
Author :
Hachicha, I. ; Fouillat, P. ; Zimmer, T. ; Dom, J.P.
Author_Institution :
CNRS URA, Bordeaux I Univ., Talence, France
Abstract :
This paper describes a new methodology to extract active doping profiles in a bipolar technological process. Simulated device characteristics coming from a physical simulator are matched to electrical measurements following a straightforward procedure. The influence of doping profile models, physical and statistical models and how to drive convenient experiments on the device under test is discussed
Keywords :
bipolar transistors; digital simulation; doping profiles; semiconductor device models; semiconductor doping; statistical analysis; active doping profiles; bipolar transistors; device under test; electrical measurements; physical device simulator; profile models; statistical models; Bipolar transistors; Chemicals; Computational modeling; Doping profiles; Drives; Electric resistance; Electric variables measurement; Integrated circuit modeling; Semiconductor process modeling; Testing;
Conference_Titel :
Microelectronic Test Structures, 1996. ICMTS 1996. Proceedings. 1996 IEEE International Conference on
Conference_Location :
Trento
Print_ISBN :
0-7803-2783-7
DOI :
10.1109/ICMTS.1996.535662
