Preparation and characterization of lanthanum-modified lead titanate thin films

Author

Algueró, M. ; Pardo, L. ; Calzada, M.L.

Author_Institution

Inst. de Ciencia de Materiales de Madrid, CSIC, Madrid, Spain

Volume

2

fYear

1996

fDate

18-21 Aug 1996

Firstpage

797

Abstract

Lanthanum-modified lead titanate (PTL) ferroelectric thin films are prepared by a recently developed diol-based sol-gel route. Different microstructures are obtained by varying the heating rate during the thermal treatment. Ferroelectric hysteresis loops, pulse response and a.c. current density measurements are carried out to study the thin film electrical behaviour. Conduction is found to be non-negligible. Switchable polarization and coercive field are higher in films heated at a rate higher than 500°C/min than in those heated at 10°C/min

Keywords

crystal microstructure; current density; dielectric hysteresis; dielectric losses; dielectric polarisation; ferroelectric materials; ferroelectric switching; ferroelectric thin films; lanthanum compounds; lead compounds; permittivity; sol-gel processing; (Pb,La)TiO₃; (PbLa)TiO₃; AC current density; characterization; coercive field; diol-based sol-gel route; ferroelectric hysteresis loops; ferroelectric thin films; heating rate; lanthanum-modified lead titanate thin films; microstructures; preparation; pulse response; switchable polarization; thermal treatment; thin film electrical behaviour; Current density; Current measurement; Density measurement; Ferroelectric materials; Heat treatment; Hysteresis; Microstructure; Pulse measurements; Titanium compounds; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on

Conference_Location

East Brunswick, NJ

Print_ISBN

0-7803-3355-1

Type

conf

DOI

10.1109/ISAF.1996.598144

Filename

598144